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1st post test

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WOOHOO I finally found a free blogging software that supports MathJax!  Testing math equation rendering: \begin{equation} \frac{V_1kC_{A0}}{F_{A0}} = \int_0^{X_{A1}} \frac{dX_A}{1-X_A}=\frac{(100 \cdot L)(0.6 \cdot min^{-1})(5 \cdot mol \cdot L^{-1})}{100 \cdot mol \cdot min^{-1}} \end{equation} https://www.quora.com/How-can-you-write-math-equations-on-Blogger-or-Blogspot Thanks so much my fellow Quora user!
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Pn Junction Diode - what happens to carrier profiles when voltage biases are applied?

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The pn Diode Circuit Symbol and Terminal Characteristics(6.1) There are 3 regions of operations of the pn diode Zero Bias- diode current \(I_D>0\) with the diode voltage \(V_D\approx 0.7 v\) Forward bias- diode current \(I_D\approx 0\) Backward Bias- diode current \(I_D<0\) and the diode voltage \(V_D< V_{BD}\) where \(V_{BD}\) is the diode’s breakdown voltage The transport of holes from the p side across the depletion region into the n side under a forward bias is called hole injection The transport of electrons from the n side to p side of the junction under a forward bias is called electron injection Let us see what is happening in the different regions Thermal equilibrium. Recap that the right side is the n side while the left is the p side. S-shape increasing graph will be the electrons while the S-shape decreasing graph will be the holes. No net hole or electron current density. All these covered in the 1st section if you recall We have \[|J...
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Short Base Pn Junction Diode Total Current Density Equation in steady state

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Now consider when voltage \( V_D \) is applied to the diode. Consider the forward biased case and observe the following figure the linear profile will be explained in the next section Recall from previously due to minority carrier injection into the QNR(outside the depletion region) \( n_p(-x_p)\gg n_{po}(-x_{po})=n_{po} \) \( p_n(x_n)\gg p_{no}(x_{no})=p_{no} \) This is essentially the concentration difference that drives the net diffusion into the QNR. See below for more Boundary Conditions Note that at the ohmic contacts in this figure we ensure that \( p_n(W_n)=p_{no} \) \( n_p(-W_p)=n_{po} \) that is the minority carrier concentrations are at their thermal equilibrium concentrations. Essentially we are saying that all excess carries injected starting from the edge of SCR must all recombine at the ohmic contact after diffusing across the negative concentration gradient assuming the balance between the very large ...
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